mitsubishi nch power mosfet FY6BGH-02F high-speed switching use preliminary notice: this is not a final specification. some parametric limits are subject to change. sep. 2000 3.0 0.275 0.65 1.1 6.4 4.4 ? ? ? a?? ?? ? source gate drain a ?? ? ? ? mitsubishi nch power mosfet FY6BGH-02F high-speed switching use preliminary notice: this is not a final specification. some parametric limits are subject to change. FY6BGH-02F outline drawing dimensions in mm application li - ion battery protection tssop8 l drain common l 2.5v drive l v dss .................................................................................. 20v l r ds (on) (max) .............................................................. 25m w l i d ........................................................................................... 6a maximum ratings (tc = 25 c) 20 10 6 42 6 1.3 5.2 1.4 C55 ~ +150 C55 ~ +150 0.035 v gs = 0v v ds = 0v l = 10 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol parameter conditions ratings unit
mitsubishi nch power mosfet FY6BGH-02F high-speed switching use preliminary notice: this is not a final specification. some parametric limits are subject to change. sep. 2000 electrical characteristics (tch = 25 c) v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr v v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 20 10 0.5 0.9 20 25 0.120 15 1150 0.85 50 10 0.1 1.5 25 35 0.150 1.1 89.3 drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 10v, v ds = 0v v ds = 20v, v gs = 0v i d = 1ma, v ds = 10v i d = 6a, v gs = 4v i d = 3a, v gs = 2.5v i d = 6a, v gs = 4v i d = 6a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 10v, i d = 3a, v gs = 4v, r gen = r gs = 50 w i s = 1.3a, v gs = 0v channel to ambient i s = 1.3a, dis/dt = C50a/ m s
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